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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD534/536/538 DESCRIPTION With TO-220C package Complement to type BD533/535/537 Low saturation voltage APPLICATIONS For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25ae ) SYMBOL PARAMETER VCBO VCEO CHA IN Emitter-base voltage Collector current Emitter current Base current Collector-base voltage GE S N BD536 BD538 BD534 BD536 BD538 BD534 Open emitter- EMIC CONDITIONS OND TOR UC VALUE -45 -60 -80 -45 UNIT V Collector-emitter voltage Open base -60 -80 V VEBO IC IE IB PC Tj Tstg Open collector -5 -8 -8 -1 V A A A W ae ae Collector power dissipation Junction temperature Storage temperature TC=25ae 50 150 -65~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD534/536/538 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage BD534 ICBO Collector cut-off current BD536 BD538 BD534 ICES Collector cut-off current BD536 BD538 IEBO Emitter cut-off current CONDITIONS IC=-2 A;IB=-0.2 A IC=-6 A;IB=-0.6 A IC=-2A ; VCE=-2V VCB=-45V; IE=0 VCB=-60V; IE=0 VCB=-80V; IE=0 VCE=-45V; VBE=0 VCE=-60V; VBE=0 VCE=-80V; VBE=0 VEB=5V; IC=0 20 IC=-10mA ; VCE=-5V -0.1 mA -0.1 mA -0.8 -1.5 MIN TYP. MAX -0.8 UNIT V V V SYMBOL VCEsat-1 VCEsat-2 VBE hFE-1 DC current gain BD534/536 BD538 hFE-2 DC current gain DC current gain (All device) hFE-3 hFE-4 DC current gain (All device) INCH GE S AN Group: J Group: K Group: J Group: K IC=-0.5A ; VCE=-2V IC=-2A ; VCE=-2V EMIC OND 15 40 30 40 15 TOR UC 75 100 -1 mA IC=-3A ; VCE=-2V 20 IC=-0.5A ; VCE=-1V 3 12 MHz fT Transition frequency 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BD534/536/538 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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